Preparation of n-type semiconducting Ge20Bi10Se70 glass

Abstract

Chalcogenide bulk glasses exhibiting n‐type conduction were first prepared by quenching the melts of mixtures of Ge, Se, and Bi₂Se₃ or Bi. The conditions for obtaining homogeneous glasses were examined, and measurements of resistivity and thermoelectric power were carried out on Ge₂₀Bi₁₀Se₇₀ glass, one of the typical n‐type semiconducting glasses in the system Ge‐Bi‐Se. The results indicated that the electrical properties of homogeneous glasses were slightly affected by the difference in starting materials, and the resistivity and thermoelectric power were about 3×10⁷ Ω cm and −1.4 mV/K at room temperature, respectively.