Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition
- 15 January 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (3), 344-346
- https://doi.org/10.1063/1.1340867
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Interface properties of AlxGa1−xN/AlN heterostructures from optical waveguiding informationApplied Physics Letters, 1999
- Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor depositionApplied Physics Letters, 1999
- Analysis of composition fluctuations in AlxGa1−xNMaterials Science and Engineering B, 1999
- Domain structure in chemically ordered InxGa1−xN alloys grown by molecular beam epitaxyJournal of Applied Physics, 1999
- Optimizing scans on asymmetric reflectionsJournal of Physics D: Applied Physics, 1999
- Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxyApplied Physics Letters, 1998
- Long range order in AlxGa1−xN films grown by molecular beam epitaxyApplied Physics Letters, 1997
- EMS - a software package for electron diffraction analysis and HREM image simulation in materials scienceUltramicroscopy, 1987