Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor deposition
- 11 October 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (15), 2202-2204
- https://doi.org/10.1063/1.124964
Abstract
We have recently reported the occurrence of phase separation in InxGa1−xN samples with x>0.25. Theoretical studies have suggested that InxGa1−xN can phase-separate asymmetrically into a low InN% phase and an ordered high InN% phase. In this letter, we report on the existence of simultaneous phase separation and ordering of InxGa1−xN samples with x>0.25. In these samples, phase separation was detected by both transmission electron microscopy selected area diffraction (TEM-SAD) and x-ray diffraction. Ordering was detected by both imaging and TEM-SAD.Keywords
This publication has 11 references indexed in Scilit:
- Simultaneous phase separation and basal-plane atomic ordering in InxGa1−xNApplied Physics Letters, 1998
- Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxyApplied Physics Letters, 1998
- Phase separation in InGaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1998
- Long range order in AlxGa1−xN films grown by molecular beam epitaxyApplied Physics Letters, 1997
- Solid phase immiscibility in GaInNApplied Physics Letters, 1996
- AlGaN ultraviolet photoconductors grown on sapphireApplied Physics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayersApplied Physics Letters, 1992
- Atomic ordering in III/V semiconductor alloysJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Ground state structures in ordered binary alloys with second neighbor interactionsActa Metallurgica, 1972