Binding energy of biexcitons and bound excitons in quantum wells
- 15 July 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (2), 871-879
- https://doi.org/10.1103/physrevb.28.871
Abstract
The binding energy of excitons in a semiconductor (e.g., GaAs) quantum well to each other and to neutral donors is calculated variationally using the six-parameter wave function of Brinkman, Rice, and Bell. The biexciton results for wells of various thicknesses agree closely with some of the data previously assigned to the biexciton. The biexciton binding relative to the exciton binding in the two-dimensional limit is about 3-4 times larger than in the three-dimensional case, but otherwise varies in a similar way with the mass ratio. It is found that the biexciton and bound exciton closely obey Haynes's rule.Keywords
This publication has 15 references indexed in Scilit:
- Bound excitons in p-doped GaAs quantum wellsSolid State Communications, 1982
- Biexcitons in GaAs quantum wellsPhysical Review B, 1982
- Properties of excitons bound to neutral donorsPhysical Review B, 1981
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981
- Thermodynamics of excitonic molecules in siliconPhysical Review B, 1979
- The ground state of positronium hydrideJournal of Physics B: Atomic and Molecular Physics, 1974
- The Excitonic MoleculePhysical Review B, 1973
- Excitonic Molecule. I. Calculation of the Binding EnergyJournal of the Physics Society Japan, 1972
- Experimental Proof of the Existence of a New Electronic Complex in SiliconPhysical Review Letters, 1960
- Binding Energy of the Positronium MoleculePhysical Review B, 1947