Observation of the excited level of excitons in GaAs quantum wells
- 15 July 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 24 (2), 1134-1136
- https://doi.org/10.1103/physrevb.24.1134
Abstract
The light- and heavy-hole two-dimensional exciton term values are determined directly from the excitation spectra of GaAs- heterostructures with GaAs well widths from 42 to 145 Å. these values are in excellent agreement with a theoretical model which contains no adjustable parameters. This theory also gives integrated strengths for the excitons which agree with experiment, and ground-state binding energies as a function of .
Keywords
This publication has 5 references indexed in Scilit:
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981
- The exciton in recombination in AlxGa1−xAs-GaAs quantum-well heterostructuresSolid State Communications, 1980
- Luminescence studies of optically pumped quantum wells in GaAs-multilayer structuresPhysical Review B, 1980
- Theory of electroabsorption by anisotropic and layered semiconductors. I. Two-dimensional excitons in a uniform electric fieldPhysical Review B, 1976
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971