Observation of the excited level of excitons in GaAs quantum wells

Abstract
The light- and heavy-hole two-dimensional exciton term values are determined directly from the excitation spectra of GaAs-AlxGa1xAs heterostructures with GaAs well widths L from 42 to 145 Å. these values are in excellent agreement with a theoretical model which contains no adjustable parameters. This theory also gives integrated strengths for the excitons which agree with experiment, and ground-state binding energies as a function of L.