Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs
- 17 December 2015
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 62 (6), 2888-2893
- https://doi.org/10.1109/tns.2015.2497090
Abstract
InGaAs nanowire (NW) gate-all-around (GAA) MOSFETs exhibit superior radiation hardness compared to planar devices and FinFETs, benefitting from reduced gate-oxide electric fields. Applied gate bias during irradiation, channel thickness, and presence or absence of a forming gas anneal can strongly affect NW device radiation hardness. Low-frequency noise measurements are carried out to probe near-interfacial oxide-trap (border-trap) densities, and TCAD simulations are performed to assist in understanding the charge trapping in NW channel devices with high-k gate dielectrics. Optimized device structures exhibit high radiation tolerance.Keywords
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