Electronic effect of doped oxygen atoms in Bi2201 superconductors determined by scanning tunneling microscopy
- 18 September 2018
- journal article
- research article
- Published by Springer Science and Business Media LLC in Science China Physics Mechanics and Astronomy
- Vol. 61 (12), 127404
- https://doi.org/10.1007/s11433-018-9276-5
Abstract
No abstract availableKeywords
This publication has 34 references indexed in Scilit:
- ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVDChinese Physics Letters, 2010
- Imaging the impact on cuprate superconductivity of varying the interatomic distances within individual crystal unit cellsProceedings of the National Academy of Sciences of the United States of America, 2008
- Imaging the two gaps of the high-temperature superconductor Bi2Sr2CuO6+xNature Physics, 2007
- Correlating Off-Stoichiometric Doping and Nanoscale Electronic Inhomogeneity in the High-SuperconductorPhysical Review Letters, 2007
- Effect of Disorder Outside thePlanes onof Copper Oxide SuperconductorsPhysical Review Letters, 2005
- Direct determination of localized impurity levels located in the blocking layers ofusing scanning tunneling microscopy/spectroscopyPhysical Review B, 2005
- Microscopic electronic inhomogeneity in the high-Tc superconductor Bi2Sr2CaCu2O8+xNature, 2001
- Temperature and doping dependence of the pseudogap and superconducting gapPhysical Review B, 1999
- Relation of the superstructure modulation and extra-oxygen local-structural distortion inPhysical Review B, 1997
- Multiple microstructures and the effect of element doping (Ba,La,Pb) on the 2:2:0:1 phasePhysical Review B, 1993