ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD
- 1 December 2010
- journal article
- Published by IOP Publishing in Chinese Physics Letters
- Vol. 27 (12)
- https://doi.org/10.1088/0256-307x/27/12/128504
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Field-effect transistors with thin ZnO as active layer for gas sensor applicationsMicroelectronic Engineering, 2008
- Application of pulsed laser deposited zinc oxide films to thin film transistor deviceThin Solid Films, 2008
- Impact of aluminum nitride as an insulator on the performance of zinc oxide thin film transistorsApplied Physics Letters, 2008
- ZnO-based thin film transistors having high refractive index silicon nitride gateApplied Physics Letters, 2007
- Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxyThin Solid Films, 2007
- High mobility ZnO thin film deposition on SrTiO3 and transparent field effect transistor fabricationSuperlattices and Microstructures, 2005
- Recent advances in ZnO transparent thin film transistorsThin Solid Films, 2005
- Deposition and electrical properties of N–In codoped p-type ZnO films by ultrasonic spray pyrolysisApplied Physics Letters, 2004
- p-type conduction in codoped ZnO thin filmsJournal of Applied Physics, 2003
- Optical properties of epitaxially grown zinc oxide films on sapphire by pulsed laser depositionJournal of Applied Physics, 1999