Electronic Conduction Characteristics of Sel-Gel Ferroelectric Pb(Zr0.4Ti0.6)O3 Thin-Film Capacitors: Part II
- 1 October 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (10R)
- https://doi.org/10.1143/jjap.34.5674
Abstract
We studied the electronic conduction characteristics of sol-gel ferroelectric Pb(Zr0.4Ti0.6)O3 thin-film capacitors by evaluation of time-dependent leakage current ( I-t ) and current-voltage ( I-V ) characteristics along with other dielectric properties. We derived an experimental formula to explain the leakage current at low field as a function of electric field, time and temperature. The ohmic-like current at low field depended on both the amount of excess Pb and thickness, which might be explained by the leakage current being governed by the amount of ionized point defects with an activation energy of about 0.5 eV. The ohmic-like current which was decreased after DC stressing reverted back to its original value during the recovery time at high temperature. The 50% recovery time had an activation energy of 0.53 eV. We proposed a plausible conduction model governed by trapping into ionized point defects.Keywords
This publication has 16 references indexed in Scilit:
- Current-Voltage Characteristics of Electron-Cyclotron-Resonance Sputter-Deposited SrTiO3 Thin FilmsJapanese Journal of Applied Physics, 1994
- Polarization Fatigue Characteristics of Sol-Gel Ferroelectric Pb(Zr0.4Ti0.6)O3 Thin-Film CapacitorsJapanese Journal of Applied Physics, 1994
- Defect chemistry and transport properties of Pb(Zr1/2Ti1/2)O3Integrated Ferroelectrics, 1994
- A model for electrical conduction in metal-ferroelectric-metal thin-film capacitorsJournal of Applied Physics, 1994
- Evaluation of Imprint Properties in Sol-Gel Ferroelectric Pb(ZrTi)O3 Thin-Film CapacitorsJapanese Journal of Applied Physics, 1993
- Electrical characteristics of ferroelectric PZT thin films for DRAM applicationsIEEE Transactions on Electron Devices, 1992
- Charge motion in ferroelectric thin filmsFerroelectrics, 1991
- Ferroelectric MemoriesScience, 1989
- Measurement of the grain-boundary states in semiconductors by deep-level transient spectroscopyPhysical Review B, 1987
- Space Charge Layer Near the Surface of a FerroelectricPhysical Review B, 1955