Optimization and New Structure of Superjunction With Isolator Layer
- 28 November 2016
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 64 (1), 217-223
- https://doi.org/10.1109/ted.2016.2628056
Abstract
An optimization theory is developed for the balanced symmetric superjunction with the interface isolator layer (I-SJ) in this paper. The theory includes two parts: the electric field calculation by the Taylor series method; the design formulas by the minimum specific onresistance RON,min optimization. Based on the theory, a new I-SJ structure with a single cell is proposed, which shows the minimum RON among the superjunction (SJ) devices with the 1 μm shallow depths. RON of the new device is reduced by 53.5% compared with that of the conventional SJ lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOS) and 67.6% with the conventional LDMOS under the same breakdown voltage V B of 658 V.Keywords
Funding Information
- National Natural Science Foundation of China (61376080, 61474017)
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