A snapback-free RC-IGBT with Alternating N/P buffers
- 1 May 2017
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In DiodeIEEE Electron Device Letters, 2012
- An Investigation of a Novel Snapback-Free Reverse-Conducting IGBT and With Dual GatesIEEE Transactions on Electron Devices, 2012
- A Snapback Suppressed Reverse-Conducting IGBT With a Floating p-Region in Trench CollectorIEEE Electron Device Letters, 2012
- 1200V reverse conducting IGBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004