Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode
- 26 October 2012
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 33 (12), 1684-1686
- https://doi.org/10.1109/led.2012.2219612
Abstract
A band-to-band tunneling injection insulated-gate bipolar transistor (IGBT) featuring a tunnel junction as the collector p-n junction is proposed. The tunnel junction injects not only holes into the n-drift region by diffusion when it is forward biased but also electrons by band-to-band tunneling when it is reverse biased. Thus, the proposed device shows the output characteristics of a reverse conducting IGBT (RC-IGBT). Compared with the conventional RC-IGBT, which is prone to current concentration, the proposed device conducts current uniformly in both forward and reverse conducting states, which are favorable to the increase in conducting capability and the reduction in the reverse recovery peak current. During the reverse recovery, the electrons extracted from the drift region to the collector induce the hole injection into the drift region, which leads to the soft reverse recovery of the built-in diode. In addition, the technological ease of fabrication (no backside photolithography) is another attraction of the proposed device.Keywords
This publication has 10 references indexed in Scilit:
- A Snapback Suppressed Reverse-Conducting IGBT With a Floating p-Region in Trench CollectorIEEE Electron Device Letters, 2012
- Low turnoff loss reverse-conducting IGBT with double n-p-n electron extraction pathsElectronics Letters, 2012
- The radial layout design concept for the Bi-mode insulated gate transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2011
- The Soft $\hbox{Punchthrough}+$ Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron InjectionIEEE Transactions on Electron Devices, 2011
- The $\hbox{nn}^{+}$-Junction as the Key to Improved Ruggedness and Soft Recovery of Power DiodesIEEE Transactions on Electron Devices, 2009
- The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications2009 21st International Symposium on Power Semiconductor Devices & IC's, 2009
- A MOS Gated Power Semiconductor Switch Using Band-to-Band Tunneling and Avalanche Injection MechanismIEEE Transactions on Electron Devices, 2008
- Anode Design Variation in 1200-V Trench Field-stop Reverse-conducting IGBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- 1200V reverse conducting IGBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Excess Tunnel Current in Silicon Esaki JunctionsPhysical Review B, 1961