High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si

Abstract

An enhancement‐mode p‐channel metal‐oxide‐semiconductor field‐effect transistor (PMOSFET) is fabricated on a strained Si layer for the first time. A biaxial strain in a thin Si layer is produced by pseudomorphically growing this layer on a Ge_0.25Si_0.75 buffer layer which is grown on a Si substrate. At higher magnitude of gate bias, channel mobility of a strained Si PMOSFET has been found to be 50% higher than that of an identically processed conventional Si PMOSFET.