High quality interfacial sulfur passivation via H2S pre-deposition annealing for an atomic-layer-deposited HfO2 film on a Ge substrate
- 15 December 2015
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 4 (4), 850-856
- https://doi.org/10.1039/c5tc03267a
Abstract
The effects of interface sulfur passivation for ALD HfO2/Ge substrate were studied through the (NH4)2S solution treatment and the rapid thermal annealing under an H2S atmosphere.Keywords
Funding Information
- National Research Foundation of Korea (NRF-2014R1A2A1A10052979)
- Korea Institute of Energy Technology Evaluation and Planning (No.20123010010160, No.20154030200680)
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