An isothermal etchback-regrowth method for high-efficiency Ga1−xAlxAs-GaAs solar cells
- 1 May 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (9), 492-493
- https://doi.org/10.1063/1.89461
Abstract
High‐efficiency p‐Ga1−xAlxAs, p‐GaAs, n‐GaAs solar cells are made by isothermally soaking n‐GaAs substrates in an undersaturated Zn‐doped Ga‐Al‐As melt. This one‐step growth procedure produces a graded band gap p‐Ga1−xAlxAs layer 0.2–0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured.This publication has 5 references indexed in Scilit:
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