Interfacial recombination at (AlGa)As/GaAs heterojunction structures
- 1 April 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (4), 1538-1544
- https://doi.org/10.1063/1.322821
Abstract
A determination has been made of the effective interfacial recombination at Al0.25Ga0.75As/GaAs and Al0.5Ga0.5As/GaAs heterojunctions. The recombination velocity was deduced from the dependence of the minority‐carrier lifetime on junction spacing in heterojunction diodes. For heterojunction spacings in excess of about 1 μm, the interfacial recombination can be characterized by a recombination velocity of 4×103 and 8×103 cm/s for Al0.25Ga0.75As/GaAs and Al0.5Ga0.5As/GaAs heterojunctions, respectively. However, for double‐heterojunction spacings below 1 μm, the minority‐carrier lifetime is invariant, suggesting that the interfacial recombination velocity decreases with decreasing heterojunction spacing. No such effect is observed in single‐heterojunction diodes.Keywords
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