Electron-Phonon Interaction in Semiconducting Layer Structures
- 2 November 1964
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 136 (3A), A833-A836
- https://doi.org/10.1103/physrev.136.a833
Abstract
A new electron-phonon interaction characteristic of layer structures is described. Depending on the strength of the coupling between electron and lattice, this interaction, which involves short-range forces, leads to free or self-trapped charge carriers. The theoretical findings are compared with the experimentally determined charge-carrier mobilities in GaSe and Mo.
Keywords
This publication has 4 references indexed in Scilit:
- Electrical resistivity and hall effect of single crystals of GaTe and GaSeJournal of Physics and Chemistry of Solids, 1962
- Analytical methods in the theory of electron lattice interactions Part IAnnals of Physics, 1959
- Semiconductors of the type AIIIBVIJournal of Physics and Chemistry of Solids, 1959
- The theory of electronic conduction in polar semi-conductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1953