Electrical resistivity and hall effect of single crystals of GaTe and GaSe
- 1 October 1962
- journal article
- Published by Elsevier BV in Journal of Physics and Chemistry of Solids
- Vol. 23 (10), 1363-1370
- https://doi.org/10.1016/0022-3697(62)90189-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Optical absorption edge of GaTeJournal of Physics and Chemistry of Solids, 1962
- Electronic States on Dislocations in SemiconductorsPhysical Review Letters, 1962
- Apparatus for the Measurement of Galvanomagnetic Effects in High Resistance SemiconductorsReview of Scientific Instruments, 1961
- Semiconductors of the type AIIIBVIJournal of Physics and Chemistry of Solids, 1959
- Apparatus for Measuring Resistivity and Hall Coefficient of SemiconductorsReview of Scientific Instruments, 1955
- Über die Kristallstruktur des GaSZeitschrift für anorganische und allgemeine Chemie, 1955
- Kristallchemische Ergebnisse an Phasen aus B-ElementenThe Science of Nature, 1954
- Kristallstrukturen des GaSeThe Science of Nature, 1953