The $R_{\mathrm{\scriptscriptstyle ON},\mathrm {min}}$ of Balanced Symmetric Vertical Super Junction Based on R-Well Model
- 7 December 2016
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 64 (1), 224-230
- https://doi.org/10.1109/ted.2016.2632113
Abstract
The global optimization of the balanced symmetric vertical superjunction (VSJ) device is proposed based on the R-well model for the first time to realize the unique minimum specific on-resistance R ON,min . The R-well model, which is originated from our previous VSJ mode theory, shows the relationship between R ON and the doping concentration N under the given pillar width W and breakdown voltage V B . The global R ON optimization is realized to obtain the design formulas of N and the pillar length Ld. The calculated results are in good agreement with the simulations. It is demonstrated from the comparisons with the simulations and the existing experiments that the optimization in this paper realizes the unique R on,min with a relationship of R ON ∝ V B 1.03 . The R-well model is also universal for other R on optimizations.Keywords
Funding Information
- National Natural Science Foundation of China (61376080, 61474017)
- Natural Science Foundation of Guangdong Province (2014A030313736)
- Fundamental Research Funds for the Central Universities (ZYGX2013J030)
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