Transformer-Based Uneven Doherty Power Amplifier in 90 nm CMOS for WLAN Applications
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- 30 April 2012
- journal article
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 47 (7), 1659-1671
- https://doi.org/10.1109/jssc.2012.2191334
Abstract
This paper presents a fully integrated transformer-based Doherty power amplifier in a standard 90 nm CMOS process. A novel asymmetrical series combining transformer is used to achieve uneven Doherty operation. The transformer-based uneven Doherty architecture is analyzed to further improve the back-off efficiency without linearity degradation. The fabricated two-stage uneven Doherty PA achieves a maximum output power of 26.3 dBm at 2.4 GHz with a peak power added efficiency (PAE) of 33% at 2 V supply voltage. The PAE at 6 dB back-off is still as high as 25.1%. The PA is tested with 54 Mbps WLAN 802.11g signal and it meets the stringent EVM and spectral mask requirements at 19.3 dBm average output power with a PAE of 22.9% with no need of predistortion. An open loop digital predistortion is applied to further improve the linearity. The PA satisfies WLAN requirements at 20.2 dBm average output power with a PAE of 24.7% with predistortion.Keywords
This publication has 22 references indexed in Scilit:
- A 31.5dBm outphasing class-D power amplifier in 45nm CMOS with back-off efficiency enhancement by dynamic power controlPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2011
- A 2.4 GHz fully integrated Doherty power amplifier using series combining transformerPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2010
- A Fully Integrated Dual-Mode Highly Linear 2.4 GHz CMOS Power Amplifier for 4G WiMax ApplicationsIEEE Journal of Solid-State Circuits, 2009
- Fully Integrated CMOS Power Amplifier With Efficiency Enhancement at Power Back-OffIEEE Journal of Solid-State Circuits, 2008
- Experimental Characterization of the Effect of Metal Dummy Fills on Spiral InductorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- A Monolithic High-Efficiency 2.4-GHz 20-dBm SiGe BiCMOS Envelope-Tracking OFDM Power AmplifierIEEE Journal of Solid-State Circuits, 2007
- A $+$31.5 dBm CMOS RF Doherty Power Amplifier for Wireless CommunicationsIEEE Journal of Solid-State Circuits, 2006
- Physics-based wideband predictive compact model for inductors with high amounts of dummy metal fillIEEE Transactions on Microwave Theory and Techniques, 2006
- Distributed active transformer-a new power-combining and impedance-transformation techniqueIEEE Transactions on Microwave Theory and Techniques, 2002
- Fully integrated CMOS power amplifier design using the distributed active-transformer architectureIEEE Journal of Solid-State Circuits, 2002