A Monolithic High-Efficiency 2.4-GHz 20-dBm SiGe BiCMOS Envelope-Tracking OFDM Power Amplifier
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- 29 May 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 42 (6), 1271-1281
- https://doi.org/10.1109/jssc.2007.897170
Abstract
A monolithic SiGe BiCMOS envelope-tracking power amplifier (PA) is demonstrated for 802.11g OFDM applications at 2.4 GHz. The 4-mm2 die includes a high-efficiency high-precision envelope amplifier and a two-stage SiGe HBT PA for RF amplification. Off-chip digital predistortion is employed to improve EVM performance. The two-stage amplifier exhibits 12-dB gain, <5% EVM, 20-dBm OFDM output power, and an overall efficiency (including the envelope amplifier) of 28%.Keywords
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