Self-aligned self assembly of multi-nanowire silicon field effect transistors

Abstract

We demonstrate the efficacy of diblock copolymerself assembly for solving key fabrication challenges of aggressively scaled siliconfield effect transistors. These materials spontaneously form nanometer-scale patterns that self-align to larger-scale lithography, enabling construction of sub-lithographic semiconducting transistor channels composed of arrays of parallel nanowires with critical dimensions (15 nm width, 40 nm pitch) defined by self assembly. The number of nanowires in the arrays is readily adjusted, greatly reducing the complexity associated with width-scaling of nanowiretransistors. We measured Schottky source/drain multi-nanowire n -channel devices comprised of 6, 8, 10, and 16 nanowires, with current drives of ∼ 5 μ A ∕ wire and current on/off ratios of ∼ 10 5 .