Review of solution-processed oxide thin-film transistors
- 29 January 2014
- journal article
- review article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 53 (2S), 02BA02
- https://doi.org/10.7567/jjap.53.02ba02
Abstract
In this review, we summarize solution-processed oxide thin-film transistors (TFTs) researches based on our fulfillments. We describe the fundamental studies of precursor composition effects at the beginning in order to figure out the role of each component in oxide semiconductors, and then present low temperature process for the adoption of flexible devices. Moreover, channel engineering for high performance and reliability of solution-processed oxide TFTs and various coating methods: spin-coating, inkjet printing, and gravure printing are also presented. The last topic of this review is an overview of multi-functional solution-processed oxide TFTs for various applications such as photodetector, biosensor, and memory.Keywords
This publication has 50 references indexed in Scilit:
- Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistorsApplied Physics Letters, 2012
- Study on the Effects of Zr-Incorporated InZnO Thin-Film Transistors Using a Solution ProcessJapanese Journal of Applied Physics, 2011
- Memory effects of all‐solution‐processed oxide thin‐film transistors using ZnO nanoparticlesJournal of the Society for Information Display, 2011
- Low-Temperature, High-Performance, Solution-Processed Indium Oxide Thin-Film TransistorsJournal of the American Chemical Society, 2011
- The effect of La in InZnO systems for solution-processed amorphous oxide thin-film transistorsApplied Physics Letters, 2010
- Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistorsApplied Physics Letters, 2010
- Electrical characteristics of solution‐processed InGaZnO thin film transistors depending on Ga concentrationPhysica Status Solidi (a), 2010
- InGaZnO thin‐film transistors with YHfZnO gate insulator by solution processPhysica Status Solidi (a), 2010
- Solution-Processed Zinc Tin Oxide Semiconductor for Thin-Film TransistorsThe Journal of Physical Chemistry C, 2008
- Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution depositionJournal of Applied Physics, 2001