Atomic ordering in As and alloy semiconductors
- 15 June 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (24), 2567-2570
- https://doi.org/10.1103/physrevlett.58.2567
Abstract
GaInAs-InP and GaInAsP-InP multilayers have been investigated by transmission electron microscopy. Electron diffraction studies on 〈1¯10〉 edge-on samples indicate that atomic ordering produces a phase with R3¯m symmetry. This is of different symmetry from the one observed previously in GAlnAs, GaAsSb, and GalnAs. Only one or two variants of the ordered phase are observed in our layered structure.Keywords
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