Frequency response analysis of pentacene thin-film transistors with low impedance contact by interface molecular doping
- 2 July 2007
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 91 (1), 013512
- https://doi.org/10.1063/1.2754350
Abstract
Frequency response measurements were performed on top-contact pentacene organic thin-film transistors (OTFTs). The ac characteristics of OTFTs are strongly limited by the contact interface between a metallic electrode and a pentacene thin film. Local doping of a charge transfer molecule (CTM) into the contact interface efficiently improves the ac characteristics. Metal-insulator-semiconductor capacitance measurements revealed that the interface contains parasitic impedance composed of capacitance and resistance in parallel. The parasitic impedance was suppressed by CTM doping of the interface. The limitation factors for the frequency of operation in such an OTFT are discussed based on the experimental results and an equivalent circuit model.This publication has 15 references indexed in Scilit:
- Investigation of complex channel capacitance in C60 field effect transistor and evaluation of the effect of grain boundariesCurrent Applied Physics, 2007
- Direct measurement of carrier drift velocity and mobility in a polymer field-effect transistorApplied Physics Letters, 2006
- Analysis of transient phenomena of C60 field effect transistorsApplied Physics Letters, 2006
- Equivalent circuit for an organic field-effect transistor from impedance measurements under dc biasApplied Physics Letters, 2006
- Pentacene transistor encapsulated by poly-para-xylylene behaving as gate dielectric insulator and passivation filmApplied Physics Letters, 2005
- Interface states in polymer metal-insulator-semiconductor devicesJournal of Applied Physics, 2005
- Characterization of polymeric metal-insulator–semiconductor diodesSynthetic Metals, 2004
- Fabrication and analysis of polymer field-effect transistorsphysica status solidi (a), 2004
- Improving organic transistor performance with Schottky contactsApplied Physics Letters, 2004
- Scaling behavior and parasitic series resistance in disordered organic field-effect transistorsApplied Physics Letters, 2003