Direct measurement of carrier drift velocity and mobility in a polymer field-effect transistor

Abstract

An electronic method to measure the drift velocity and mobility of charge carriers in polymer thin film transistor has been developed. The measurement is based on the movement of a packet of carriers injected into the channel. This technique can be used to explore trap states and therefore obtain a comprehensive understanding of charge transport in these materials. Drift mobility of 0.52 cm 2 ∕ V s is obtained from the transit time which is a factor of 3 higher than the field-effect transistormobility.