Room-temperature sign reversed spin accumulation signals in silicon-based devices using an atomically smooth Fe3Si/Si(111) contact
- 7 January 2013
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 113 (1), 013916
- https://doi.org/10.1063/1.4773072
Abstract
We demonstrate a reliable sign-reversed spin signal detected by three-terminal Hanle effect measurements at room temperature in the Si-based lateral devices with one Schottky-tunnel contact. Theoretical calculations of the spin polarized density of states suggest the sign difference in the spin polarization (P) between the two types of interfaces. Actually, we directly observe the atomic steps at the interface, implying that there is a possible origin of the sign difference in the spin polarization (P) between spin-injection region and spin-detection one in one contact. The reliable sign-reversed spin signals support that the injected spins are transported laterally in the Si channel even for the three-terminal Hanle-effect measurements.
Keywords
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