Resistive Switching Induced by Metallic Filaments Formation through Poly(3,4-ethylene-dioxythiophene):Poly(styrenesulfonate)
- 27 December 2011
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 4 (1), 447-453
- https://doi.org/10.1021/am201518v
Abstract
We report the design and fabrication of Al/poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/Cu resistive memory devices that utilize the Cu redox reaction and conformational features of PEDOT:PSS to achieve resistive switching. The top Cu electrode acts as the source of the redox ions that are injected through the PEDOT:PSS layer during the forming process. The Cu filament is confirmed directly using the cross-sectional images of transmission electron microscopy and energy-dispersive X-ray spectroscopy. The resultant resistive memory devices can operate over a small voltage range, i.e., the switching-on threshold voltage is less than 1.5 V and the absolute value of the switching-off threshold voltage is less than 1.0 V. The on/off current ratio is as large as 1 × 104 and the two different resistance states can be maintained over 106 s. Moreover, the devices present good thermal stability that the resistive switching can be observed even at temperature up to 160 °C, at which the oxidation of the Cu top electrode is the failure factor. Furthermore, the cause of failure for Al/PEDOT:PSS/Cu memory devices at higher temperature is confirmed to be the oxidation of Cu top electrode.This publication has 33 references indexed in Scilit:
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structuresNature Materials, 2011
- High Temperature Polyimide Containing Anthracene Moiety and Its Structure, Interface, and Nonvolatile Memory BehaviorACS Applied Materials & Interfaces, 2011
- Programmable Permanent Data Storage Characteristics of Nanoscale Thin Films of a Thermally Stable Aromatic PolyimideLangmuir, 2009
- Organic nonpolar nonvolatile resistive switching in poly(3,4-ethylene-dioxythiophene): Polystyrenesulfonate thin filmOrganic Electronics, 2009
- Resistive Switching and Memory Effect Based on CuSCN Complex Layer Created Through Interface ReactionsElectrochemical and Solid-State Letters, 2009
- Bipolar switching characteristics of nonvolatile memory devices based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) thin filmApplied Physics Letters, 2008
- Memristive switching mechanism for metal/oxide/metal nanodevicesNature Nanotechnology, 2008
- Injection‐induced De‐doping in a Conducting Polymer during Device Operation: Asymmetry in the Hole Injection and Extraction RatesAdvanced Materials, 2007
- Novel Digital Nonvolatile Memory Devices Based on Semiconducting Polymer Thin FilmsAdvanced Functional Materials, 2007
- Nonvolatile Memory Elements Based on Organic MaterialsAdvanced Materials, 2007