High critical current density NbN/AlN/NbN tunnel junctions fabricated on ambient temperature MgO substrates
- 11 April 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (15), 2034-2036
- https://doi.org/10.1063/1.111730
Abstract
NbN/AlN/NbN tunnel junctions are fabricated at ambient temperature on MgO substrates, and a critical current density of 8 kA/cm2 is obtained in junctions with 1.5–nm–thick AlN barriers. Even though the NbN/AlN/NbN trilayers are deposited without intentional heating, the junctions show a large gap voltage (Vg=5 mV), sharp quasiparticle current rise (ΔVg=0.16 mV), and small subgap leakage current (Vm=25 mV and Rsg/RN=9). This report shows that high-quality NbN/AlN/NbN tunnel junctions can be made at ambient substrate temperature.This publication has 14 references indexed in Scilit:
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