Vacancy-Induced Ferromagnetism of MoS2 Nanosheets
Top Cited Papers
- 10 February 2015
- journal article
- research article
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
- Vol. 137 (7), 2622-2627
- https://doi.org/10.1021/ja5120908
Abstract
Outstanding magnetic properties are highly desired for two-dimensional ultrathin semiconductor nanosheets. Here, we propose a phase incorporation strategy to induce robust room-temperature ferromagnetism in a nonmagnetic MoS2 semiconductor. A two-step hydrothermal method was used to intentionally introduce sulfur vacancies in a 2H-MoS2 ultrathin nanosheet host, which prompts the transformation of the surrounding 2H-MoS2 local lattice into a trigonal (1T-MoS2) phase. 25% 1T-MoS2 phase incorporation in 2H-MoS2 nanosheets can enhance the electron carrier concentration by an order, introduce a Mo(4+) 4d energy state within the bandgap, and create a robust intrinsic ferromagnetic response of 0.25 μB/Mo by the exchange interactions between sulfur vacancy and the Mo(4+) 4d bandgap state at room temperature. This design opens up new possibility for effective manipulation of exchange interactions in two-dimensional nanostructures.Keywords
Funding Information
- Ministry of Science and Technology of the People's Republic of China (2012CB825800)
- National Natural Science Foundation of China (11135008, 11321503, 11435012, 11475176, U1232129, U1332111, U1332131)
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