Low-Frequency Electronic Noise in Single-Layer MoS2 Transistors
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- 19 August 2013
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 13 (9), 4351-4355
- https://doi.org/10.1021/nl402150r
Abstract
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.005 and 2.0 in vacuum (< 10-5 Torr). The field-effect mobility decreased and the noise amplitude increased by an order of magnitude in ambient conditions, revealing the significant influence of atmospheric adsorbates on charge transport. In addition, single Lorentzian generation-recombination noise was observed to increase by an order of magnitude as the devices were cooled from 300 K to 6.5 K.Comment: Nano Letters (2013This publication has 53 references indexed in Scilit:
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