Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy
- 1 April 2002
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 389-393, 489-492
- https://doi.org/10.4028/www.scientific.net/msf.389-393.489