Threshold reduction by rapid thermal annealing in MBE-grown AlInGaAs multiquantum well lasers on GaAs

Abstract

The authors report a significant improvement in laser performance in AlInGaAs multiquantum well lasers using rapid thermal annealing (RTA). They observe that threshold current densities can be reduced by up to a factor of 5 with post-growth rapid thermal annealing for AlInGaAs/AlGaAs quantum well lasers. A record low threshold current density of 118 A/cm2 per well was achieved in 835 nm strained AlInGaAs doublequantum well (DQW) lasers grown by solid source molecular beam epitaxy (MBE).