AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy

Abstract

Separate‐confinement heterostructure diode lasers containing a strained Al_0.18In_0.20Ga_0.62 As single quantum well active layer and Al_0.25Ga_0.75As confining layers have been fabricated from structures grown on GaAs substrates by low‐pressure organometallic vapor phase epitaxy. The emission wavelength of these devices is 814 nm. Threshold current density is as low as 103 A cm⁻² for cavity length L=1500 μm, and differential quantum efficiency as high as 90% for L=280 μm. The characteristic temperature T₀ is 214 K between 10 and 40 °C, and 159 K between 40 and 80 °C. Preliminary tests of cw operation suggest that these lasers are more reliable than AlGaAs/AlGaAs lasers.