Reveal of dislocation etch pits on {001} GaP with hot phosphoric acid
- 16 November 1977
- journal article
- research article
- Published by Wiley in physica status solidi (a)
- Vol. 44 (1), K13-K14
- https://doi.org/10.1002/pssa.2210440147
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- A dislocation etchant for {100} gallium phosphideJournal of Electronic Materials, 1976
- Selective Etching of GaP Crystals with Hot Phosphoric AcidJournal of the Electrochemical Society, 1976
- Characterization of vapor grown (001) GaAs1−xPx layers by selective photo-etchingJournal of Crystal Growth, 1975
- On structural etching of GaP and (Ga, In)Pphysica status solidi (a), 1975
- A preliminary study of dislocations in indium and gallium phosphidesJournal of Materials Science, 1973
- Etching Studies of Impurity Precipitates in Pulled GaP CrystalsJournal of the Electrochemical Society, 1971