On structural etching of GaP and (Ga, In)P
- 16 November 1975
- journal article
- research article
- Published by Wiley in physica status solidi (a)
- Vol. 32 (1), 133-138
- https://doi.org/10.1002/pssa.2210320114
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- On the method and results of a dislocation structure analysis of Ga(As, P) by etchingphysica status solidi (a), 1975
- On chemical etching of structural defects in epitaxial GaAs1-xPx and bulk GaAsphysica status solidi (a), 1974
- A preliminary study of dislocations in indium and gallium phosphidesJournal of Materials Science, 1973
- Etch Pit Studies of GaP Liquid Phase Epitaxial LayersJournal of the Electrochemical Society, 1973
- The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystalsJournal of Applied Physics, 1972
- Etching Studies of Impurity Precipitates in Pulled GaP CrystalsJournal of the Electrochemical Society, 1971
- The Defect Structure of GaP Crystals Grown from Gallium Solutions, Vapor Phase and Liquid Phase Epitaxial DepositionJournal of the Electrochemical Society, 1968
- Study of Impurity Heterogeneities in InSb by Means of a Permanganate EtchantJournal of the Electrochemical Society, 1967
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965
- Some defects in crystals grown from the melt - I. Defects caused by thermal stressesProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1956