Simulation Study of a 3-D Device Integrating FinFET and UTBFET
- 2 December 2014
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 62 (1), 83-87
- https://doi.org/10.1109/ted.2014.2372695
Abstract
By integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate FinFETs with unprecedented levels of chip-area efficiency. This makes it suitable for ultralarge-scale integration high-performance logic at and beyond the 10-nm technology node.Keywords
Funding Information
- Office of Competitive Research Funds through the King Abdullah University of Science and Technology, Thuwal, Saudi Arabia (CRG-1-2012-HUS-008)
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