Optical properties of AlGaN∕GaN multiple quantum well structure by using a high-temperature AlN buffer on sapphire substrate
- 15 January 2006
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 99 (2), 023513
- https://doi.org/10.1063/1.2161941
Abstract
We demonstrated highly improved optical properties of the AlGaN ∕ GaN multiple quantum well(MQW) structure grown on a GaN layer with significant reduction of dislocations achieved using an AlN buffer directly grown on a sapphire substrate at high temperature, in comparison with the MQWgrown using a conventional two-step technique. An enhancement of room-temperature photoluminescence intensity by up to one order of magnitude has been observed, compared with the conventional MQW.Transmission electron microscopy measurements indicated that the dislocation density of the GaNgrown using the AlN buffer technique was dramatically reduced. Furthermore, the significantly improved optical properties of this MQW using this AlN buffer technique were also demonstrated by increasing the thickness of the GaN layer underneath, whose crystal quality can be improved by increasing thickness, confirmed by detailed x-ray measurements. Since the technique can significantly improve the optical efficiency in the ultraviolet (UV) spectral region without involvement of any ex situ patterning process, it should be highlighted in the development of high performance UV light-emitting diodes, currently a highly regarded research area.Keywords
This publication has 21 references indexed in Scilit:
- 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting DiodesJapanese Journal of Applied Physics, 2004
- Growth, spectroscopic and thermal behavior of Cd(SCN)2(DMSO)2Journal of Crystal Growth, 2002
- 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrateApplied Physics Letters, 2002
- Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaNApplied Physics Letters, 2001
- Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet regionApplied Physics Letters, 2001
- Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowthApplied Physics Letters, 1998
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986