Thermoelastic analysis of GaAs in LEC growth configuration
- 1 June 1989
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 96 (2), 390-404
- https://doi.org/10.1016/0022-0248(89)90538-1
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Thermoelastic analysis of GaAs in lec growth configurationJournal of Crystal Growth, 1988
- Fluid motion in the encapsulant region of the LEC growth systemJournal of Crystal Growth, 1987
- Infrared absorbance of B2O3 at temperatures to 1250 °CJournal of Crystal Growth, 1987
- Mathematical modelling of the liquid encapsulated Czochralski growth of gallium arsenideJournal of Crystal Growth, 1987
- Mathematical modelling of the liquid encapsulated czochralski growth of gallium arsenideJournal of Crystal Growth, 1987
- Effect of natural convection and thermal transparency of liquid encapsulant on thermal stresses during LEG growth of GaAsInternational Journal of Heat and Mass Transfer, 1987
- Thermoelastic analysis of GaAs in LEC growth configurationJournal of Crystal Growth, 1987
- Temperature profile and thermal stress calculations in GaAs crystals growing from the meltJournal of Crystal Growth, 1983
- Formation of dislocations during liquid encapsulated Czochralski growth of GaAs single crystalsApplied Physics Letters, 1982
- A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs CrystalsBell System Technical Journal, 1980