Infrared absorbance of B2O3 at temperatures to 1250 °C
- 30 September 1987
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 84 (3), 460-466
- https://doi.org/10.1016/0022-0248(87)90276-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Thermoelastic analysis of GaAs in LEC growth configurationJournal of Crystal Growth, 1987
- The theory and practice of dislocation reduction in GaAs and InPJournal of Crystal Growth, 1984
- Single crystals of germanium and silicon—Basic to the transistor and integrated circuitIEEE Transactions on Electron Devices, 1976
- Pulling of gallium phosphide crystals by liquid encapsulationJournal of Crystal Growth, 1968