Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices
- 13 December 2010
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 97 (24), 242510
- https://doi.org/10.1063/1.3527962
Abstract
Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to a free layer to achieve large spin-transfer torques and ultrafast energy efficient switching. We have fabricated and studied OST-MRAM devices that incorporate a perpendicularly magnetized spin-polarizing layer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer. Reliable switching is observed at room temperature with 0.7 V amplitude pulses of 500 ps duration. The switching is bipolar, occurring for positive and negative polarity pulses, consistent with a precessional reversal mechanism, and requires an energy of less than 450 fJ.This publication has 16 references indexed in Scilit:
- Single-Shot Time-Domain Studies of Spin-Torque-Driven Switching in Magnetic Tunnel JunctionsPhysical Review Letters, 2010
- 100 ps precessional spin-transfer switching of a planar magnetic random access memory cell with perpendicular spin polarizerApplied Physics Letters, 2009
- Device implications of spin-transfer torquesJournal of Magnetism and Magnetic Materials, 2008
- Single-Shot Time-Resolved Measurements of Nanosecond-Scale Spin-Transfer Induced Switching: Stochastic Versus Deterministic AspectsPhysical Review Letters, 2008
- Ferromagnetic resonance study of sputtered Co|Ni multilayersZeitschrift für Physik B Condensed Matter, 2007
- Time-Resolved Reversal of Spin-Transfer Switching in a NanomagnetPhysical Review Letters, 2004
- Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunnelingApplied Physics Letters, 2003
- Current-driven excitation of magnetic multilayersJournal of Magnetism and Magnetic Materials, 1996
- Prediction and confirmation of perpendicular magnetic anisotropy in Co/Ni multilayersPhysical Review Letters, 1992
- Two-Current Conduction in NickelPhysical Review Letters, 1968