Origin of the Excess Capacitance at Intimate Schottky Contacts
- 4 January 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 60 (1), 53-56
- https://doi.org/10.1103/physrevlett.60.53
Abstract
We identify the physical origin of the excess capacitance at Schottky diodes without an interfacial layer, i.e., intimate Schottky contacts. Measured capacitance in excess of the space-charge capacitance is shown to be caused by the injection of minority carriers into the bulk semiconductor, rather than by the presence of interface states, as previously thought. Minority-carrier injection depends sensitively on the properties of the Ohmic back-contact.Keywords
This publication has 15 references indexed in Scilit:
- Interface-State Measurements at Schottky Contacts: A New Admittance TechniquePhysical Review Letters, 1986
- Investigation of metal-semiconductor interface states by constant emission rate and constant capture rate capacitance spectroscopiesSurface Science, 1986
- Electronic states at silicide-silicon interfacesPhysical Review Letters, 1986
- Correlation of Schottky-Barrier Height and Microstructure in the Epitaxial Ni Silicide on Si(111)Physical Review Letters, 1985
- Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor InterfacesPhysical Review Letters, 1984
- Study of metal-semiconductor interface states using Schottky capacitance spectroscopyJournal of Physics C: Solid State Physics, 1983
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983
- Minority carrier effects upon the small signal and steady-state properties of Schottky diodesSolid-State Electronics, 1973
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942