Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
- 6 February 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 52 (6), 461-464
- https://doi.org/10.1103/physrevlett.52.461
Abstract
Electrical behaviors at two single-crystal metal-semiconductor interfaces are studied. Schottky-barrier heights of Ni layers grown under ultrahigh-vacuum conditions on -type Si(111) are found to be 0.65 and 0.79 eV for type- and type- epitaxial systems, respectively. These results are compared with the proposed theoretical models of Schottky barriers.
Keywords
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