Avalanche Breakdown in Germanium

Abstract

It is shown that all germanium junctions studied break down as the result of the same avalanche process found in silicon. An empirical expression for the multiplication inherent in this breakdown process is given for step junctions. Ionization rates for holes and electrons in Ge are derived with the use of this expression. The ionization rate for holes is larger than that for electrons by about a factor of two. The agreement between these ionization rates as a function of field and the theory of Wolff is excellent. It is determined that the threshold for electron-hole pair production is about 1.50 ev and the mean free path for electron (or hole)-phonon collisions is about 130 A.