Avalanche Breakdown in Silicon
- 15 May 1954
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 94 (4), 877-884
- https://doi.org/10.1103/physrev.94.877
Abstract
An avalanche theory of breakdown at room temperature is proposed for semiconductors based on the assumption of approximately equal ionization rates for electrons and positive holes. The problem of obtaining ionization rates from data obtained in inhomogeneous fields is solved exactly for two specific field distributions. Ionization rates for silicon thus calculated from experimental data on breakdown voltage and on prebreakdown multiplication for both linear-gradient and step junctions are in good agreement. The temperature coefficient of the ionization rate exhibits a similar internal consistency. It is concluded that internal field emission has not been observed in silicon.Keywords
This publication has 2 references indexed in Scilit:
- Electron Multiplication in Silicon and GermaniumPhysical Review B, 1953
- Observations of Zener Current in GermaniumJunctionsPhysical Review B, 1951