High-temperature characterization and comparison of 1.2 kV SiC power MOSFETs
- 1 September 2013
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 2013 IEEE Energy Conversion Congress and Exposition
- p. 3235-3242
- https://doi.org/10.1109/ecce.2013.6647125
Abstract
The aim of this work is to characterize and compare the high-temperature performances of the latest generation 1.2 kV Silicon Carbide (SiC) MOSFETs from three well-known manufacturers: Cree, ROHM, and GE. A complete static characterization is performed from 25 °C to 200 °C, including threshold voltage, specific on-resistance, leakage current, junction capacitances, and internal gate resistance. The dynamic performance of each device is evaluated through double-pulse tests conducted from 25 °C to 200 °C. From these double-pulse tests, the switching losses are computed.Keywords
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