Visible light emission from heavily doped porous silicon homojunction pn diodes
- 15 February 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (7), 708-710
- https://doi.org/10.1063/1.109603
Abstract
We observed visible light emission with a peak wavelength of 640 nm from forward biased, heavily doped porous silicon homojunction pn diodes. The light emission is attributed to electron‐hole recombination across the direct band gap of the monocrystalline quantum wires which make up the porous silicon junction layers.This publication has 12 references indexed in Scilit:
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