Evidence for quantum confinement in the photoluminescence of porous Si and SiGe
- 21 October 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (17), 2118-2120
- https://doi.org/10.1063/1.106098
Abstract
We have used anodization techniques to process porous surface regions in p‐type Czochralski Si and in p‐type Si0.85Ge0.15 epitaxial layers grown by molecular beam epitaxy. The SiGe layers were unrelaxed before processing. We have observed strong near‐infrared and visible light emission from both systems. Analysis of the radiative and nonradiative recombination processes indicate that the emission is consistent with the decay of excitons localized in structures of one or zero dimensions.Keywords
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