Formation of Al-doped ZnO films by dc magnetron reactive sputtering
- 29 March 2001
- journal article
- research article
- Published by Elsevier BV in Materials Letters
- Vol. 48 (3-4), 194-198
- https://doi.org/10.1016/s0167-577x(00)00302-5
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Preparation and characterization of ZnO:Al films by pulsed laser depositionThin Solid Films, 1997
- D.c. and r.f. (reactive) magnetron sputtering of ZnO:Al films from metallic and ceramic targets: a comparative studySurface and Coatings Technology, 1997
- The physical properties of Al-doped zinc oxide films prepared by RF magnetron sputteringThin Solid Films, 1997
- XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting filmsThin Solid Films, 1996
- Mirrorless all-optical bistability in bacteriorhodopsinApplied Physics Letters, 1993
- Electrical and optical properties of indium tin oxide thin films deposited on unheated substrates by d.c. reactive sputteringThin Solid Films, 1993
- Studies on the interface between novel type ZnO and p-a-SiC:H in 1.5 eV a-SiGe:H pin diodes in comparison to SnOx and ITOSolar Energy Materials and Solar Cells, 1992
- Substrate temperature dependence of electrical properties of ZnO:Al epitaxial films on sapphire (12̄10)Journal of Applied Physics, 1991
- Highly transparent and conducting zinc oxide films deposited by activated reactive evaporationJournal of Electronic Materials, 1987
- Effect of hydrogen plasma treatment on transparent conducting oxidesApplied Physics Letters, 1986