Preparation and characterization of ZnO:Al films by pulsed laser deposition
- 1 October 1997
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 307 (1-2), 50-53
- https://doi.org/10.1016/s0040-6090(97)00303-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Characterization and analysis of ZnO:Al deposited by reactive magnetron sputteringJournal of Vacuum Science & Technology A, 1995
- Preparation and characterization of ZnO films by an evaporating methodJournal of Vacuum Science & Technology A, 1995
- Characteristics of high quality ZnO thin films deposited by pulsed laser depositionApplied Physics Letters, 1994
- Pulsed laser deposition of PZT/LSCO heterostructure for integrated ferroelectric devicesSolid State Communications, 1994
- Influence of discharge parameters on the layer properties of reactive magnetron sputtered ZnO:Al filmsThin Solid Films, 1994
- Preparation of indium tin oxide films at room temperature by pulsed laser depositionThin Solid Films, 1993
- Properties of Aluminum-Doped ZnO Thin Films Grown by Electron Beam EvaporationJapanese Journal of Applied Physics, 1989
- Band-gap widening in heavily Sn-dopedPhysical Review B, 1984
- Anomalous Optical Absorption Limit in InSbPhysical Review B, 1954